AFGB40T65SQDN دیتاشیت

AFGB40T65SQDN

مشخصات دیتاشیت

نام دیتاشیت AFGB40T65SQDN
حجم فایل 88.201 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت AFGB40T65SQDN

دانلود دیتاشیت

سایر مستندات

AFGB40T65SQDN 9 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi AFGB40T65SQDN
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 80A
  • Power Dissipation (Pd): 238W
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.858mJ
  • Pulsed Collector Current (Icm): 160A
  • Turn?off Switching Loss (Eoff): 0.229mJ
  • Diode Reverse Recovery Time (Trr): 131ns
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
  • Package: D2PAK
  • Manufacturer: onsemi
  • Series: Automotive, AEC-Q101
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 238W
  • Switching Energy: 858µJ (on), 229µJ (off)
  • Input Type: Standard
  • Gate Charge: 76nC
  • Td (on/off) @ 25°C: 17.6ns/75.2ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 131ns
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D²PAK-3 (TO-263-3)
  • Base Part Number: AFGB40
  • detail: IGBT 650V 80A 238W Surface Mount D²PAK-3 (TO-263-3)

محصولات مشابه